Toward an Innovative Monolithic Integration of Vertical and Lateral GaN Devices
Zahraa Zaidan  1, 2, *, @  , Nedal Al Taradeh  1  , Christophe Rodriguez  1  , Abdelatif Jaouad  1  , Ali Soltani  1  , Josiane Tasselli  2  , Karine Isoird  2  , Luong Viet Phung  3  , Camille Sonneville  3  , Dominique Planson  3  , Yvon Cordier  4  , Frédéric Morancho  2  , Hassan Maher  1  
1 : CNRS-LN2, 3IT-Université de Sherbrooke
3000 Boulevard de l'Université, Sherbrooke J1K 0A5, QC -  Canada
2 : LAAS-CNRS, Université de Toulouse
LAAS-CNRS, Université de Toulouse
7 Av. du Colonel Roche, 31400 Toulouse -  France
3 : Univ. Lyon, INSA Lyon, Univ. Claude Bernard Lyon 1, Ecole Centrale Lyon, CNRS, Ampère
Univ Lyon, INSA Lyon, Université Lyon 1, Ecole Centrale de Lyon, CNRS, Ampère, UMR5505, 69621 Villeurbanne, France
F-69621, Lyon -  France
4 : CNRS-CRHEA
CRHEA-CNRS
Rue Bernard Grégory, 06560 Valbonne -  France
* : Auteur correspondant
Type : : oral
Langue du texte intégral : anglais
Commentaire : This work presents an innovative technology where GaN-based vertical and lateral devices are monolithically integrated. Indeed, this technology will enable to drive high-power switching devices (vertical GaN power FinFETs) using lateral GaN HEMTs with minimum losses and high stability. The main challenge of this technology is the electrical isolation between these two devices. In this paper, a new isolation approach is presented to avoid any degradation of the lateral transistor performance. In fact, the high voltage applied at the drain of the vertical GaN power FinFET can drastically affect the drain current of the lateral GaN HEMT. To overcome this problem, a highly doped n+ GaN layer is inserted between the epi-layers of these two devices. TCAD-Sentaurus simulator is used to validate this new approach. Indeed, this highly n-doped GaN layer is blocking the vertical high electrical field and preventing any depletion of the 2D gas of the lateral GaN HEMT. To the best of our knowledge, it is the first time where the vertical and lateral GaN devices are integrated within the same technology.
Thématiques : Composants, Capteurs et leurs applications
Mots-Clés : GaN HEMT ; vertical GaN FinFET ; TCAD ; Sentaurus ; isolation ; highly doped GaN ; integrated circuits
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