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Realization of MIS capacitors (Al/Si3N4/GaAs): modeling of the C-V electrical behavio
1 : Faculty of Sciences Ben M'sik, Hassan II University
Commandant Driss El Harti, B.P. 7955, Casablanca, Morocco -
Maroc
| Type : | : | oral |
| Langue du texte intégral | : | français |
| Commentaire | : | Recently, several works have focused on the synthesis of electronically ideal semiconductor surfaces by different means: chemical, photo-chemical or physical. Indeed, surfaces and interfaces played a decisive role in semiconductor electronic devices. It is therefore desirable to satisfy the surface dangling bonds, so as to move the surface states out of the band gap. Several electronic devices are particularly sensitive to electrically active surface sites. Passivation is one of the ways that can improve the surface quality of GaAs. Sulfur passivation is the surface treatment process that has been used to reduce recombination rates and surface state density [1]. In this study, the MIS (Al/Si3N4/n-GaAs) capacitors were fabricated on n-GaAs (100) substrate using inorganic sulfide (NH4)2S surface passivation followed by a layer deposit silicon nitride by the technical PECVD (plasma enhanced chemical vapor deposition). The C-V and G-V measurements show are highly dependent on to the measurement frequency, bias voltage, and the excitation frequencies used (low or high frequency PECVD). However, detailed information is obtained, such as interface state density and other parameters can be deduced from C-V measurements and their dependence in frequency [2]. The electrical properties of the insulator-semiconductor interface are also improved after annealing and show a significant reduction of the interface fixed charges leading the unpinning of the Fermi level and a modulation of the surface potential. The theoretical modeling of the C-V characteristic helps to better interpret the experimental results and describe the surface states. The Terman method was used to extract the density of interface states. The Dit energy density distribution profiles were obtained from this study. |
| Thématiques | : | Composants, Capteurs et leurs applications |
| Mots-Clés | : | Passivation of III ; V semiconductors ; LF ; PECVD and HF ; PECVD method ; C ; V and G ; V electrical measurements ; MIS structures |
| PDF version | : |  PDF version |
